Mathematical modeling of the physical mechanism of the formation of a bulk surface charge in semiconductors for intelligent frequency sensors for gas concentration
{"title":"Mathematical modeling of the physical mechanism of the formation of a bulk surface charge in semiconductors for intelligent frequency sensors for gas concentration","authors":"A. Osadchuk, V. Osadchuk, Y. Osadchuk","doi":"10.31649/1681-7893-2019-38-2-107-112","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":142101,"journal":{"name":"Optoelectronic information-power technologies","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronic information-power technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31649/1681-7893-2019-38-2-107-112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}