{"title":"DC-40 GHz and 20-40 GHz MMIC SPDT Switches","authors":"M. Schindler, A. Morris","doi":"10.1109/MCS.1987.1114521","DOIUrl":null,"url":null,"abstract":"Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHz switch uses a combination of series and shunt FETs. Better than 3 dB insertion loss and 23 dB isolation have been achieved. Power handling and switching speed have also been measured for both switch types.
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