Electrical modeling and analysis of polymer-cavity through-silicon vias

Abstract

The polymer-cavity through-silicon vias (TSVs) on low resistivity silicon (LRSi) are proposed in this letter to reduce the conductive substrate losses for microwave applications, due to that the coupling loss of conventional LRSi is considerable in high speed three-dimensional integrated circuits (3-D ICs). The accurate wideband equivalent circuit model and simplified π-model are derived based on the physical design parameters, which are established by the ADS software. Well agreements between the proposed models and 3D full-wave EM field simulation of Ansoft's HFSS are shown with the operating frequencies up to 20 GHz.