C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning
{"title":"Screening vdsm outliers using nominal and subthreshold supply voltage I/sub DDQ/","authors":"C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning","doi":"10.1109/TEST.2003.1270883","DOIUrl":null,"url":null,"abstract":"Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Test Conference, 2003. Proceedings. ITC 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2003.1270883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.
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