The NCAP Nonlinear T Model for Bipolar Junction Transistors at UHF Frequencies

C. Paludi, J. Whalen
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Abstract

The Nonlinear Circuit Analysis Program (NCAP) has been used to calculate nonlinear transfer functions which subsequently predict Electromagnetic Interference (EMI) effects in electronic circuits containing discrete semiconductor devices for RF frequencies up to 100 MHz. However, NCAP has not previously been tested nor documented in the UHF frequency range (300 to 3000 MHz). The purpose of this paper is to present the first predicted results of EMI effects in discrete bipolar junction transistors, using NCAP's nonlinear transfer functions, in the UHF range. The predicted results will be compared to experimental results.
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超高频双极结晶体管的NCAP非线性T模型
非线性电路分析程序(NCAP)已被用于计算非线性传递函数,该传递函数随后预测包含射频频率高达100 MHz的分立半导体器件的电子电路中的电磁干扰(EMI)效应。然而,NCAP之前没有在UHF频率范围(300至3000 MHz)进行测试或记录。本文的目的是利用NCAP的非线性传递函数,在UHF范围内提出离散双极结晶体管中电磁干扰效应的第一个预测结果。将预测结果与实验结果进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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