P. Varangis, H. Li, G.T. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester
{"title":"183 nm tuning range in a grating-coupled external-cavity quantum dot laser","authors":"P. Varangis, H. Li, G.T. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester","doi":"10.1109/ISLC.2000.882325","DOIUrl":null,"url":null,"abstract":"We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle of a 10-nm thick InGaAs quantum well and sandwiched by GaAs waveguide layers.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle of a 10-nm thick InGaAs quantum well and sandwiched by GaAs waveguide layers.