{"title":"RF-Power Induced Clock Jitter Degradation and Its Modeling in High-Speed I/O Interfaces","authors":"S. Gaskill, Hao-han Hsu, Chung-hao Chen","doi":"10.1109/EMCSI.2018.8495172","DOIUrl":null,"url":null,"abstract":"This paper investigates jitter degradation of highspeed I/O when RF power sources, such as smartphone, are in proximity to the I/O link. The jitter is increased by as high as ~200% when a 500-mW LTE antenna is 3 cm away from the transmission line at 831 MHz and may cause failure of the high-speed link. An analytic model is developed to capture the jitter behavior at various RF amplitudes and clock slew-rates. A good agreement among the model, simulation, and measurement is obtained at various frequencies and with a measured LTE signal. This study may help to predict the jitter degradation due to adjacent RF power and may be more critical to I/O interfaces with higher speed.","PeriodicalId":120342,"journal":{"name":"2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCSI.2018.8495172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper investigates jitter degradation of highspeed I/O when RF power sources, such as smartphone, are in proximity to the I/O link. The jitter is increased by as high as ~200% when a 500-mW LTE antenna is 3 cm away from the transmission line at 831 MHz and may cause failure of the high-speed link. An analytic model is developed to capture the jitter behavior at various RF amplitudes and clock slew-rates. A good agreement among the model, simulation, and measurement is obtained at various frequencies and with a measured LTE signal. This study may help to predict the jitter degradation due to adjacent RF power and may be more critical to I/O interfaces with higher speed.