{"title":"A full-load hybrid compensated ldo with output capacitance range of 0 to 1 μF","authors":"Yuet Ho Woo, K. Mak, K. Leung","doi":"10.1109/EDSSC.2017.8126398","DOIUrl":null,"url":null,"abstract":"A full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-μF capacitive load. Experimental results prove the LDO stability and fast recovery speed.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-μF capacitive load. Experimental results prove the LDO stability and fast recovery speed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
