{"title":"Basic strain physics","authors":"S. T. Chang, C. Liu","doi":"10.1109/RTP.2008.4690530","DOIUrl":null,"url":null,"abstract":"•The basic strain physics behind the CMOS device is explained and future cases of technological importance to the industry are introduced. •Strain Engineering offers very large improvements in nanoscale MOSFETs and is scalable to the end of the Si CMOS roadmap. •Strain combined with new channel material such as Ge has a bright future and can enhance CMOS technology.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2008.4690530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
•The basic strain physics behind the CMOS device is explained and future cases of technological importance to the industry are introduced. •Strain Engineering offers very large improvements in nanoscale MOSFETs and is scalable to the end of the Si CMOS roadmap. •Strain combined with new channel material such as Ge has a bright future and can enhance CMOS technology.
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