{"title":"Enhanced semitransparent monocrystalline silicon solar cell structure","authors":"E. Bándy, M. Rencz","doi":"10.1109/BEC.2014.7320548","DOIUrl":null,"url":null,"abstract":"This paper presents the technology optimization and the characterisation of an improved semitransparent solar cell structure that can be used for building integrated applications. Through-holes can be etched using ammonium persulfate doped 5 wt.% tetramethylammonium hydroxide (TMAH) solution that ensures a stable 1.52 μm/min etching rate maintained over the entire process. Diluted TMAH surface texturing combined with RF sputtered silicon nitride reduces the average surface reflectance to 2.50%. The efficiency of the anisotropically etched test structure device is 9% including grid contact and silicon through-hole areas, the reached transparency is 6.7%.","PeriodicalId":348260,"journal":{"name":"2014 14th Biennial Baltic Electronic Conference (BEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Biennial Baltic Electronic Conference (BEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEC.2014.7320548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents the technology optimization and the characterisation of an improved semitransparent solar cell structure that can be used for building integrated applications. Through-holes can be etched using ammonium persulfate doped 5 wt.% tetramethylammonium hydroxide (TMAH) solution that ensures a stable 1.52 μm/min etching rate maintained over the entire process. Diluted TMAH surface texturing combined with RF sputtered silicon nitride reduces the average surface reflectance to 2.50%. The efficiency of the anisotropically etched test structure device is 9% including grid contact and silicon through-hole areas, the reached transparency is 6.7%.