A physical DC model of short channel MOS transistor using trapezoidal Gaussian surface

Abstract

A physical DC model for short channel MOSFET is presented. The model accounts for several second order effects including the vertical and horizontal mobility degradations, velocity saturation, and the channel length modulation. Accurate electric widths at the saturation point and the drain field around the drain end is obtained through the quasi two dimensional approximation (QTDA) using Gaussian surface with trapezoidal shape. The theoretical predictions of the model show good agreement with experimental data available in the literature over a wide range of biasing conditions.