Leakage temperature dependency modeling in system level analysis

Huang Huang, Gang Quan, Jeffrey Fan
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引用次数: 30

Abstract

As the semiconductor technology continues its marching toward the deep sub-micron domain, the strong relation between leakage current and temperature becomes critical in power-aware and thermal-aware design for electronic systems. Previous circuit-level research results can capture the leakage/temperature dependency accurately, but can be too complex and thus ineffective in high level system design. In this paper, we study a large spectrum of leakage power models that are able to account for the leakage/temperature dependency, and in the meantime, are simple enough and suitable for system level design. We analyze and compare the tradeoff between the complexity and accuracy of these models empirically. Our experimental results strengthen the important role that the leakage power consumption plays in the electronic system design as the transistor size continues to shrink. More importantly, our results highlight the fact that it is vital to take the leakage/temperature and leakage/supply voltage dependency into considerations for high level power and thermal aware system level design.
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系统级分析中的泄漏温度相关性建模
随着半导体技术不断向深亚微米领域发展,泄漏电流和温度之间的密切关系在电子系统的功率感知和热感知设计中变得至关重要。以前的电路级研究结果可以准确地捕获泄漏/温度依赖关系,但可能过于复杂,因此在高层次系统设计中效果不佳。在本文中,我们研究了一个能够考虑泄漏/温度依赖关系的大谱泄漏功率模型,同时,它足够简单,适合于系统级设计。我们分析和比较了这些模型的复杂性和准确性之间的权衡。我们的实验结果加强了泄漏功耗在晶体管尺寸不断缩小的电子系统设计中的重要作用。更重要的是,我们的结果强调了这样一个事实,即在高电平功率和热感知系统级设计中,将泄漏/温度和泄漏/电源电压依赖性纳入考虑是至关重要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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