Experimental and theoretical study of excitonic electroabsorption in high-purity GaAs at room temperature

D. Sapkota, M. S. Kayastha, Makoto Takahashi, Koichi Wakita
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引用次数: 3

Abstract

The absorption spectrum in high-purity GaAs has been theoretically studied in the presence of electric field taking into account of excitonic transition and continuum band transition at room temperature. We have calculated the Stark shift, height of exciton peak, linewidth broadening of exciton, extinction ratio as a function of electric field. We also have compared these results with the experimental results and found the close agreement with experimental.
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室温下高纯砷化镓激子电吸收的实验与理论研究
从理论上研究了室温下电场存在下高纯砷化镓的激子跃迁和连续带跃迁的吸收光谱。计算了激子的斯塔克位移、激子峰高度、激子线宽展宽、消光比随电场的变化规律。我们还将这些结果与实验结果进行了比较,发现与实验结果非常吻合。
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