Reliability Study of Microwave Transistors

R. N. Clarke, B. Stallard
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Abstract

Four types of microwave transistors were tested for D. C. electromigration under accelerated to typical use conditions. A lower activation energy was obtained along with a larger preexponential constant and smaller exponent for current density for the typical electromigration equation. Three of the transistor types were also run in an operational life test at 2.0GHz. After 5,000 hours of testing, the beginnings of a correlation between the D.C. and R.F. testing have appeared. Also oscillators have failed; while amplifiers have not. Power cycling of gold lead wires has shown no fatigue deterioration of the wires or bonds. Temperature step stress showed a semiconductor device cannot be used above its eutectic temperature. A computer model is used to calculate operating temperature at high case temperature and power loading, where actual measurements are difficult to make and intrepret.
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微波晶体管可靠性研究
在加速到典型使用条件下,对四种微波晶体管进行了直流电迁移试验。对于典型的电迁移方程,得到了较低的活化能、较大的指前常数和较小的电流密度指数。其中三种晶体管类型也在2.0GHz的工作寿命测试中运行。经过5000小时的测试,直流和射频测试之间的相关性已经初步显现。振荡器也失灵了;而放大器却没有。对金铅线进行电源循环试验表明,金铅线和金铅线的键没有出现疲劳退化。温度阶跃应力表明半导体器件不能在其共晶温度以上使用。计算机模型用于计算在高温和功率负载下的工作温度,在这些情况下,实际测量很难进行和解释。
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