60GHz antenna integrated on High Resistivity silicon technologies targeting WHDMI applications

D. Titz, R. Pilard, F. Ferrero, F. Gianesello, D. Gloria, C. Luxey, P. Brachat, G. Jacquemod
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引用次数: 14

Abstract

During past years, various research team have been implied in the development of 60GHz chipset solution, using both BiCMOS or advanced CMOS technologies. But for the 60GHz market to flourish, not only low cost RFICs are required, low cost antennas and packages also are. In order to address these issues, we review in this paper achievable antenna performance using High Resistivity (HR) silicon technologies, by discussing possible integration schemes, antenna design and 3D on wafer characterization. Antenna gain of 3.9 dBi @ 60GHz has been measured making HR Si a promising technbology to address applications packaged in millimeter-wave low cost technology.
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60GHz天线集成高电阻硅技术针对WHDMI应用
在过去的几年里,各种研究团队都在开发60GHz芯片组解决方案,使用BiCMOS或先进的CMOS技术。但是60GHz市场要想蓬勃发展,不仅需要低成本的rfic,还需要低成本的天线和封装。为了解决这些问题,本文通过讨论可能的集成方案,天线设计和晶圆上3D表征,回顾了使用高电阻率(HR)硅技术可实现的天线性能。经测量,天线增益为3.9 dBi @ 60GHz,使HR Si成为解决毫米波低成本技术封装应用的有前途的技术。
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