K. Castellani-Coulié, M. Bocquet, H. Aziza, J. Portal, W. Rahajandraibe, C. Muller
{"title":"SPICE level analysis of Single Event Effects in an OxRRAM cell","authors":"K. Castellani-Coulié, M. Bocquet, H. Aziza, J. Portal, W. Rahajandraibe, C. Muller","doi":"10.1109/LATW.2013.6562684","DOIUrl":null,"url":null,"abstract":"As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.","PeriodicalId":186736,"journal":{"name":"2013 14th Latin American Test Workshop - LATW","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 14th Latin American Test Workshop - LATW","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2013.6562684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
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