Mosfet Submicron Model For Temperature Effect Characterization

Abstract

This paper presents a new circuit model for sub-um NMOSFETs and describes experiments on them. The model is focused on the temperature effect on I-V and CV characteristics. The resulting I-V modeling error (RMS: Root Mean Square) is verified to be less than 1.5% for Vd=O-SV and Vg=O-SV operating conditions, and 300-450K temperature range. The CV model error also examined, showing 6.0% at 400K. Drain current characteristics were measured with a 0.8um NMOS under various temperature conditions. Through experiments and parameter extraction (for MOSTSM model[ 1][2]) on the measured I-V data, the following results are noted (see Fig. 1). (1) Channel conductance of a unit area (Po) exhibits a significant decrease (one half) for the temperature rise from 300K to 450K. However, the corresponding drain current reduction is only 20% at Vds=Vgs=SV. (2) The above effect is caused by a change in the gate-field effect factor of channelconductance (eel ), which shows a monotonic decrease for rising temperature [4]. MOST temperature model