G. Su, Li-heng Lou, Lingling Sun, Jun Liu, J. Wen, Xiangyu Lv
{"title":"A 93.9–105.6 GHz amplifier using customized on-chip inductor","authors":"G. Su, Li-heng Lou, Lingling Sun, Jun Liu, J. Wen, Xiangyu Lv","doi":"10.1109/EDSSC.2017.8126411","DOIUrl":null,"url":null,"abstract":"A five-stage 93.9 GHz-105.6 GHz common-source CMOS amplifier is presented in this paper. The customized on-chip inductor and transmission line (TL) are designed for matching networks. Fabricated in a 65nm bulk CMOS process, this amplifier achieves a peak gain of 9 dB at 100 GHz and 11.7GHz 3-dB bandwidth range from 93.9 GHz to 105.6 GHz, consuming total power of 49.2 mW under 1.2 V voltage supply. The area of this amplifier is 0.5mm2 including pads.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A five-stage 93.9 GHz-105.6 GHz common-source CMOS amplifier is presented in this paper. The customized on-chip inductor and transmission line (TL) are designed for matching networks. Fabricated in a 65nm bulk CMOS process, this amplifier achieves a peak gain of 9 dB at 100 GHz and 11.7GHz 3-dB bandwidth range from 93.9 GHz to 105.6 GHz, consuming total power of 49.2 mW under 1.2 V voltage supply. The area of this amplifier is 0.5mm2 including pads.