Nurul Izzati Mohammad Noh, K. A. Yusof, M. Zolkapli, A. Abdullah, W. Abdullah, S. H. Herman
{"title":"Effect of channel width-to-length ratio on isothermal point of MOSFET-ISFET structure","authors":"Nurul Izzati Mohammad Noh, K. A. Yusof, M. Zolkapli, A. Abdullah, W. Abdullah, S. H. Herman","doi":"10.1109/RSM.2013.6706490","DOIUrl":null,"url":null,"abstract":"The effect of channel width-to-length (W/L) ratio on MOSFET-ISFET structures was investigated from simulation and experimental approach. A metal-oxide-semiconductor field-effect-transistor (MOSFET) has been adopted to investigate the isothermal point of an ion-sensitive FET (ISFET), which is needed to suit the readout interfacing circuit of an ISFET sensor. The MOSFET structure with different W/L ratio has been characterized in order to see the effect of W/L ratio to the isothermal point. The Keithley 236 Parameter Analyzer and Semi-auto prober micromanipulator system were used to measure the drain-source current (IDS) versus gate to source voltage (VGS) curves at various temperatures from 30 °C to 60 °C. The simulation result showed that the reduction of W/L ratio can decrease the isothermal point and this was proven by the actual measurement.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"9 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706490","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The effect of channel width-to-length (W/L) ratio on MOSFET-ISFET structures was investigated from simulation and experimental approach. A metal-oxide-semiconductor field-effect-transistor (MOSFET) has been adopted to investigate the isothermal point of an ion-sensitive FET (ISFET), which is needed to suit the readout interfacing circuit of an ISFET sensor. The MOSFET structure with different W/L ratio has been characterized in order to see the effect of W/L ratio to the isothermal point. The Keithley 236 Parameter Analyzer and Semi-auto prober micromanipulator system were used to measure the drain-source current (IDS) versus gate to source voltage (VGS) curves at various temperatures from 30 °C to 60 °C. The simulation result showed that the reduction of W/L ratio can decrease the isothermal point and this was proven by the actual measurement.
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