{"title":"MOVPE deposition of AlAs/In/sub 0.53/Ga/sub 0.47/As/InP resonant tunnelling heterostructure performing high PVR parameter","authors":"K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik","doi":"10.1109/WBL.2001.946600","DOIUrl":null,"url":null,"abstract":"The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO\"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).
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