Wenchao Chen, Manxi Wang, Xiaofan Yang, W. Yin, Erping Li
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引用次数: 2
Abstract
Modeling and simulation of Si/PEDOT:PSS planar heterojunction solar cell is performed by using the finite element method to solve Poisson equation, drift-diffusion equations and current continuity equations. PEDOT:PSS is a hole-rich organic semiconductor, which can be treated as highly p-type doped semiconductor. While, the 2μm silicon thin film is n-type doped. The Si/PEDOT:PSS heterojunction behaves like a pn junction rather than a Schottky junction as clarified in previous study and the PEDOT : PSS is much highly doped, the hole diffusion current in Si is the dominant current component. The simulated J-V characteristics of the Si/PEDOT:PSS planar heterojunction are obtained and compared with experiments.
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