{"title":"Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)","authors":"S. Subramanian, I. Ivana, Y. Yeo","doi":"10.1109/VLSI-TSA.2012.6210150","DOIUrl":null,"url":null,"abstract":"We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current IOFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance Rsh of ~20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance Rsd, as compared with a conventional UTB-FET with thin S/D.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current IOFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance Rsh of ~20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance Rsd, as compared with a conventional UTB-FET with thin S/D.
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