G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, E. Omura
{"title":"Transmission characteristics of uncooled and directly modulated 1.3 micrometers distributed feedback laser diode for serial 10 Giga bit Ethernet","authors":"G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, E. Omura","doi":"10.1109/ISLC.2000.882302","DOIUrl":null,"url":null,"abstract":"We have developed uncooled and directly modulated /spl lambda//4 shifted 1.3 /spl mu/m DFB laser diodes for 10 Gb/s Ethernet. By adopting a short cavity structure, a high relaxation oscillation frequency of 12.0 GHz at 25/spl deg/C was obtained. Even at 70/spl deg/C, it was over 10.4 GHz. The extinction ratio was 9.8 dB and the frequency bandwidth was 14 GHz at 25/spl deg/C. The power penalty of 0.6 dB at a BER of 10/sup -11/ through a +40 ps/nm dispersion SMF was obtained. This device is useful for 10 Gb/s Ethernet using over 20 km SMF without cooler.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have developed uncooled and directly modulated /spl lambda//4 shifted 1.3 /spl mu/m DFB laser diodes for 10 Gb/s Ethernet. By adopting a short cavity structure, a high relaxation oscillation frequency of 12.0 GHz at 25/spl deg/C was obtained. Even at 70/spl deg/C, it was over 10.4 GHz. The extinction ratio was 9.8 dB and the frequency bandwidth was 14 GHz at 25/spl deg/C. The power penalty of 0.6 dB at a BER of 10/sup -11/ through a +40 ps/nm dispersion SMF was obtained. This device is useful for 10 Gb/s Ethernet using over 20 km SMF without cooler.
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