{"title":"Interface properties of N/sub 2/O-annealed NH/sub 3/-treated 6H-SiC MOS capacitor","authors":"P. Lai, J. Xu, C. Chan, Y. Cheng","doi":"10.1109/HKEDM.1999.836405","DOIUrl":null,"url":null,"abstract":"Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.
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