Simulation of Neutron and Proton Displacement Damage in Ultra-Wide Bandgap Semiconductor Ga2O3

Z. Shao, Ziqi Cai, Qingmin Zhang
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Abstract

Recently, gallium oxide (Ga2O3) as an ultra-wide bandgap oxide semiconductor has aroused enormous attention in research and development due to its prospects for future power electronic, optoelectronic, and radiation detection applications. Ga2O3-based devices could be subject to fluxes of protons or neutrons if used in aerospace or radiation-hard nuclear systems, which leads to internal defects in Ga2O3 crystals and the degradation of device performance. Therefore, the radiation effects of Ga2O3 under irradiation have become a research focus, and it is of great significance to study the defect behavior and performance influence of Ga2O3 after irradiation. In this paper, the number of displacement defects produced by 1∼20 MeV neutrons in Ga2O3 were calculated using Geant4 simulations, and the factors that impact the displacement damage were studied. The results show that the displacement defects generated by neutrons do not increase monotonously with neutron energy but are closely related to the reaction cross-section and the generation of (PKA). We simulated and calculated the radiation damage by 10∼100keV protons in Ga2O3 using SRIM. It is found that ionization damage is much greater than displacement damage; the number of vacancies generated by proton radiation in Ga2O3 increases with the energy and incident angle of the incident proton. The irradiation resistance of Ga2O3 is between silicon and diamond semiconductor materials.
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超宽带隙半导体Ga2O3中中子和质子位移损伤的模拟
近年来,氧化镓(Ga2O3)作为一种超宽带隙氧化物半导体,由于其在电力电子、光电和辐射探测等领域的应用前景广阔,引起了人们的极大关注。基于Ga2O3的器件如果用于航空航天或辐射硬核系统,可能会受到质子或中子通量的影响,从而导致Ga2O3晶体的内部缺陷和器件性能的下降。因此,辐照下Ga2O3的辐射效应已成为研究热点,研究辐照后Ga2O3的缺陷行为及对其性能的影响具有重要意义。本文利用Geant4模拟计算了1 ~ 20 MeV中子在Ga2O3中产生的位移缺陷数量,并对影响位移损伤的因素进行了研究。结果表明,中子产生的位移缺陷不是随中子能量单调增加,而是与反应截面和(PKA)的生成密切相关。我们用SRIM模拟和计算了10 ~ 100keV质子在Ga2O3中的辐射损伤。发现电离损伤远大于位移损伤;质子辐射在Ga2O3中产生的空位数量随着入射质子能量和入射角的增加而增加。Ga2O3的耐辐照性介于硅和金刚石半导体材料之间。
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