A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter

Wagdy M. Gaber, P. Wambacq, J. Craninckx, M. Ingels
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引用次数: 36

Abstract

This paper presents a new approach to reduce the out of band quantization noise of Direct Digital RF Modulators (DDRM). The DDRM is organized in a FIR-like configuration to filter the quantization noise in the RX band directly at RF. To demonstrate the principle, a 0.9 GHz FIR IQ DDRM has been integrated in 130 nm CMOS. The transmitter achieves more than 22 dB reduction in the quantization noise floor to reach −152 dBc/Hz@20 MHz with a 200 KHz baseband tone. The actual DDRM is capable of both amplitude and phase modulation by using a new four-phases IQ architecture. This results in a reduced power consumption and chip area. The transmitter consumes 94 mW from a 2.7 V supply and achieves an average output power of 9.5 dBm. Leakage into the adjacent channel and into the next one of −35 dB and −53 dB, respectively have been measured for a 10 MHz OFDM signal. It also achieves −27.2 dB EVM with a 64QAM input signal.
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一种CMOS IQ直接数字射频调制器,内置射频fir量化噪声滤波器
提出了一种降低直接数字射频调制器(DDRM)带外量化噪声的新方法。DDRM被组织成一个类似fir的配置,直接在射频处过滤RX波段的量化噪声。为了演示该原理,在130 nm CMOS中集成了0.9 GHz FIR IQ DDRM。发射机实现了超过22 dB的量化噪声底降低,达到- 152 dBc/Hz@20 MHz,基带音调为200 KHz。实际的DDRM能够通过使用新的四相IQ架构进行幅度和相位调制。这就降低了功耗和芯片面积。发射机从2.7 V电源消耗94 mW,实现9.5 dBm的平均输出功率。对于10mhz OFDM信号,测量了相邻信道和下一信道的泄漏量分别为−35db和−53db。它还可以在64QAM输入信号下实现−27.2 dB EVM。
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