Analysis of strained-silicon-on-insulator double-gate MOS structures

Abstract

Ultra-thin body double-gate (DG) MOS structures with strained silicon are investigated by the solution of the 1D Schrodinger and Poisson equations, with open boundary conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current.