Hot wire deposited hydrogenated amorphous silicon solar cells

A. Mahan, E. Iwaniczko, B. Nelson, R. Reedy, R. Crandall, S. Guha, J. Yang
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引用次数: 6

Abstract

This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. We find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. We present data concerning these surface treatments, and we correlate these treatments with Schottky device performance. We also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) /spl mu/c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Our preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 /spl Aring/ thick HW i-layer, which degrade less than 10% after a 900 h AM1 light soak. We suggest avenues for further improvement of our devices.
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热丝沉积氢化非晶硅太阳能电池
本文详细介绍了一项研究的结果,其中低H含量,高沉积速率热丝(HW)沉积非晶硅(a- si:H)已纳入衬底太阳能电池。我们发现,当高沉积温度冷却HW - i层时,其顶表面的处理对器件性能至关重要。我们提出了有关这些表面处理的数据,并将这些处理与肖特基器件的性能联系起来。我们还展示了第一代HW n-i-p太阳能电池的效率数据,其中添加了辉光放电(GD) /spl mu/c-Si(p)层来完成部分器件。不使用光捕获层来提高器件的Jsc。我们的初步研究已经取得了效率高达6.8%的电池,具有4000 /spl /厚的HW - i层,在AM1光浸泡900小时后,其降解率低于10%。我们建议进一步改进我们的设备。
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