{"title":"Low-noise OTA for neural amplifying applications","authors":"S. Saberhosseini, A. Zabihian, A. M. Sodagar","doi":"10.1109/ICCDCS.2012.6188881","DOIUrl":null,"url":null,"abstract":"This paper presents an ultra low-power operational transconductance amplifier (OTA), which can be used in the implementation of preconditioning stage of implantable neural recording microsystems. In such applications, low-noise performance is both critical and challenging especially at very low power consumptions. By means of a new structure for OTA, a low-noise, low-power, and small-silicon-area OTA is proposed. The OTA was designed in a 0.5-μm standard 2P3M N-Well CMOS process. Simulation results for the proposed OTA show an open-loop gain of 62dB, unity-gain bandwidth of 4MHz, and 59nVrms/√Hz input-referred noise. Power dissipation of the OTA is as low as 4μW at 3-V supply voltage.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188881","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents an ultra low-power operational transconductance amplifier (OTA), which can be used in the implementation of preconditioning stage of implantable neural recording microsystems. In such applications, low-noise performance is both critical and challenging especially at very low power consumptions. By means of a new structure for OTA, a low-noise, low-power, and small-silicon-area OTA is proposed. The OTA was designed in a 0.5-μm standard 2P3M N-Well CMOS process. Simulation results for the proposed OTA show an open-loop gain of 62dB, unity-gain bandwidth of 4MHz, and 59nVrms/√Hz input-referred noise. Power dissipation of the OTA is as low as 4μW at 3-V supply voltage.