The electronic application of materials from the B-N-C-Si compositional tetrahedron

A. Badzian
{"title":"The electronic application of materials from the B-N-C-Si compositional tetrahedron","authors":"A. Badzian","doi":"10.1109/WBL.2001.946541","DOIUrl":null,"url":null,"abstract":"The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.
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B-N-C-Si组成四面体材料的电子应用
B-N-C-Si体系包含结晶相和无序相,这些相结合了特殊的电子能带结构、硬度和其他机械性能以及某种化学惰性。B-C-N-Si组成四面体材料的电子应用在许多方面是成功的,但在实际器件的开发中也存在许多问题和障碍。这些问题部分与生长过程和生长缺陷有关,因为难以将电子器件的要求与实际材料相匹配。本综述遵循从四相B-C-N-Si到金刚石的顺序。以聚硅偶氮化合物为前驱体合成Si-N-C陶瓷体的研究重新引起了人们的兴趣。
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