{"title":"Silicon germanium BiCMOS technology","authors":"P. Kempf, M. Racanelli","doi":"10.1109/GAAS.2002.1049016","DOIUrl":null,"url":null,"abstract":"In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.
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