GaAs MMIC thermal analysis for epoxy-mount compared with AuSn-mount

K. Nishihori, K. Ishida, Y. Kitaura, N. Uchitomi
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引用次数: 1

Abstract

The effect of attachment for chip-mounting upon the thermal resistance of GaAs power FET modules has been experimentally investigated. The thermal resistance was evaluated by electrical method, which is related to the temperature dependence of Schottky-barrier in the GaAs MESFETs. The thermal resistance of low-cost epoxy-mounted modules was found to be almost the same as that of AuSn-mounted ones for a chip-thickness of 250 /spl mu/m. Applicable expression has also been presented for optimizing thermal design of power MMICs, suggesting that the optimum chip thickness depends on the thermal conductivity of attachment material.
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环氧树脂贴片与ausn贴片的GaAs MMIC热分析
实验研究了贴片对GaAs功率场效应管模块热阻的影响。用电学方法对热阻进行了评价,认为热阻与GaAs mesfet中肖特基势垒的温度依赖性有关。当芯片厚度为250 /spl mu/m时,低成本环氧树脂封装模块的热阻与ausn封装模块的热阻基本相同。给出了优化功率mmic热设计的适用表达式,表明最佳芯片厚度取决于附着材料的热导率。
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