{"title":"First-principles study on the threshold switch selector Graphene/h-BN/Graphene and the improvement of its performance","authors":"Lihua Huang, Yuehua Dai, Jian-wen Gao, Peng Wang, Renjie Ding, Feifei Wang","doi":"10.1109/ECIE52353.2021.00009","DOIUrl":null,"url":null,"abstract":"In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (Vb) conductive filament (CF) is formed when the threshold voltage (Vth)is 0.5V, non-linearity (NL) is 104.Then, we found that Vb with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector.","PeriodicalId":219763,"journal":{"name":"2021 International Conference on Electronics, Circuits and Information Engineering (ECIE)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Electronics, Circuits and Information Engineering (ECIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECIE52353.2021.00009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (Vb) conductive filament (CF) is formed when the threshold voltage (Vth)is 0.5V, non-linearity (NL) is 104.Then, we found that Vb with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector.
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