Modelling interconnects for future VLSI circuit applications

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects Pub Date : 2019-09-27 DOI:10.1049/pbcs073g_ch7

Manodipan Sahoo

引用次数: 0

Abstract

This chapter discusses the various methods of electrical modelling of CNT- and GNR-based nano-interconnects. It also presents the ABCD parameter matrix-based method for the modelling of performance and signal integrity effects in CNT- and GNR-based VLSI nano-interconnects. The developed methodology is proven to be almost 100% accurate as SPICE with huge reduction in the computational burden. It is pointed out that both CNTs and GNRs have tremendous potential in becoming the next generation VLSI interconnects.

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建模互连为未来的VLSI电路应用

本章讨论了基于碳纳米管和gnr的纳米互连的各种电建模方法。本文还介绍了基于ABCD参数矩阵的方法，用于模拟基于碳纳米管和gnr的VLSI纳米互连的性能和信号完整性效应。所开发的方法被证明是几乎100%准确的SPICE，大大减少了计算负担。指出碳纳米管和gnr都具有成为下一代VLSI互连材料的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects

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