{"title":"Fast current pulse m.o.s. deep-depletion technique for profiling thin epitaxial and ion-implanted layers","authors":"P. Ladbrooke, R. S. Huang, J. Barnard","doi":"10.1049/IJ-SSED:19780041","DOIUrl":null,"url":null,"abstract":"An m.o.s. technique is described for making free-carrier profile measurements on thin layers using a current pulse of a few microseconds duration. The method minimises distortion of the results due to surface states and enables the profile right up to the semiconductor surface to be determined","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An m.o.s. technique is described for making free-carrier profile measurements on thin layers using a current pulse of a few microseconds duration. The method minimises distortion of the results due to surface states and enables the profile right up to the semiconductor surface to be determined
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