{"title":"MESFET nonlinearities applied to predistortion linearizer design","authors":"R. Tupynamba, E. Camargo","doi":"10.1109/MWSYM.1992.188148","DOIUrl":null,"url":null,"abstract":"Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.<>
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