Design of 8 GHz Dielectric Resonator Oscillator with Different Structure

Abstract

Microwave oscillator is an important part of RF transceiver system. In this paper, two kinds of Dielectric Resonator Oscillator (DRO) in series and parallel at 8GHz are designed by using dielectric resonator. The simulation model and specific parameters are given. Using Renesas NE3210S01 FET transistor to build the vibration circuit in Advanced Design System (ADS). The coupling model of dielectric block and microstrip line of Dielectric Resonator (DR) is established by Cell Signaling Technology (CST), to realize the parallel form and series form of dielectric resonance oscillator. The two circuits are co-simulated in ADS, at 8 GHz @100KHz, the phase noise of the series-type dielectric oscillator is −127 dBc/Hz with an output power of 7.8 dBm, while the phase noise of the shunt type dielectric oscillator is −124 dBc/Hz with an output power of 12.4 dBm.