N.F. Idham M, A.I. Ahmad Ismat, S. Rasidah, D. Asban, M. Razman Y, A.M. Abdul Fatah
{"title":"Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors","authors":"N.F. Idham M, A.I. Ahmad Ismat, S. Rasidah, D. Asban, M. Razman Y, A.M. Abdul Fatah","doi":"10.1109/SMELEC.2006.380734","DOIUrl":null,"url":null,"abstract":"Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80% (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80% (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.