Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors

N.F. Idham M, A.I. Ahmad Ismat, S. Rasidah, D. Asban, M. Razman Y, A.M. Abdul Fatah
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引用次数: 3

Abstract

Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80% (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.
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通道中铟含量对高电子迁移率晶体管电性能的影响
相对于在GaAs衬底上的拟晶型高电子迁移率晶体管和在InP衬底上的晶格匹配型高电子迁移率晶体管,变形InAlAs/InGaAs高电子迁移率晶体管(HEMT)具有许多优点。与衬底相匹配的通道晶格中铟含量高(50%)是其具有优异变质HEMT性能的关键因素。变质HEMT允许InGaAs通道组成的灵活范围从30%到80%(基于应用)[1]在组成渐变的缓冲上。利用市售的TCAD模拟变质HEMT,研究通道层中铟%的变化对器件电特性的影响。
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