N.F. Idham M, A.I. Ahmad Ismat, S. Rasidah, D. Asban, M. Razman Y, A.M. Abdul Fatah
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引用次数: 3
Abstract
Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80% (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.
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