A high gain L-band GaAs FET technology for 28 V operation

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1339091

K. Inoue, M. Nagahara, N. Ui, H. Haematsu, S. Sano, J. Fukaya

引用次数: 10

Abstract

This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called "plateau" profile is extinct. In addition, the estimated MTTF at Tch of 145/spl deg/C is longer than 4/spl times/10/sup 6/ hours.

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一种用于28 V工作的高增益l波段GaAs场效应管技术

本文介绍了一种成功研制的工作电压为28 V的l波段场效应管。充分设计了FET结构，实现了84 V击穿电压，并采用渐变掺杂通道提高了线性度。FET可实现高达42 V的记录工作电压。功率密度为1.05 W/mm，线性增益为17.2 dB, IM3为-33 dBc。获得了海峡IM3剖面，所谓的“高原”剖面已绝迹。此外，估计在145/spl°C时的MTTF长于4/spl次/10/sup / 6/ h。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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