A non-destructive technique using 3D X-ray Computed Tomography to reveal semiconductor internal physical defects

C. H. Tan, C. Lau
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Abstract

This paper focuses on the application of 3D X-ray Computed Tomography (CT) to precisely detect and confirm semiconductor internal physical defects without the need to decapsulate the sample. Equipped with advanced technologies and innovations, today's X-ray machine is capable of reconstructing the two-dimension (2D) sliced images to form 3D images and videos in much shorter time. With the introduction of 3D X-ray CT designed for electronics field, failure mechanisms once only visible after destructive analysis can now be revealed in non-destructive way. The technique not only saves cost, it shortens the turnaround time tremendously and allows customer's response and relevant improvement actions to be taken more efficiently.
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一种利用三维x射线计算机断层扫描技术揭示半导体内部物理缺陷的非破坏性技术
本文重点研究了三维x射线计算机断层扫描(CT)在不解封装样品的情况下精确检测和确认半导体内部物理缺陷的应用。今天的x光机拥有先进的技术和创新,能够在更短的时间内重建二维(2D)切片图像,形成3D图像和视频。随着专为电子领域设计的3D x射线CT的引入,曾经只有在破坏性分析后才能看到的失效机制现在可以以非破坏性的方式揭示。该技术不仅节省了成本,还极大地缩短了周转时间,并使客户的响应和相关改进行动更加有效。
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