Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato
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引用次数: 4
Abstract
In this paper, a novel circuit simulation model for V-groove SiC power MOSFET with buried P-layers is proposed. By considering the structure of the MOSFET, bias dependence of on-resistance and the kink in the terminal capacitance are represented in the proposed model. Through experiments using a V-groove SiC MOSFET, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics.
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