P-i-N Diode

Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 1993-03-02 DOI:10.1142/9789813237834_0006

Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョーアルフレッド, ジェイ．ジドジックジョージ, ルパタジョン, リーシヴェオデボラ, ケー．ダッタニロイ, エム．オブライアンジュニアヘンリー, レイモンドバーガーポール

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Abstract

PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.

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pin二极管

目的:制备一种p-i-n In0.53 Ga0.47 As光电二极管，其上电极22由半透明薄金属层和透明氧化镉锡(CTO)组成，具有光学透明复合材料。构成:10 ~ 40nm厚度的金属层24在半导体表面形成非合金欧姆接触18，作为半导体与90 ~ 600nm厚度的CTO层25之间的屏障，在对CTO层25进行反应磁控溅射时，半导体被等离子体中所含的氧氧化，防止了半导体与CTO之间形成p-n结。CTO层25作为p接触层、光学窗口和增透膜。由于上电极22，不会产生对有源层15的遮阳干扰，并且入射光可以更多地汇聚。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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