Pub Date : 2019-03-31DOI: 10.1142/9789813237834_0002
{"title":"Introduction to Semiconductor Properties","authors":"","doi":"10.1142/9789813237834_0002","DOIUrl":"https://doi.org/10.1142/9789813237834_0002","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115751548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1016/B978-0-12-382036-5.00004-5
I. Batarseh
{"title":"Power MOSFET","authors":"I. Batarseh","doi":"10.1016/B978-0-12-382036-5.00004-5","DOIUrl":"https://doi.org/10.1016/B978-0-12-382036-5.00004-5","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132588614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_fmatter
{"title":"FRONT MATTER","authors":"","doi":"10.1142/9789813237834_fmatter","DOIUrl":"https://doi.org/10.1142/9789813237834_fmatter","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_bmatter
{"title":"BACK MATTER","authors":"","doi":"10.1142/9789813237834_bmatter","DOIUrl":"https://doi.org/10.1142/9789813237834_bmatter","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123613588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_0004
{"title":"Simulation Models and Parameters","authors":"","doi":"10.1142/9789813237834_0004","DOIUrl":"https://doi.org/10.1142/9789813237834_0004","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127843283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_0008
{"title":"Junction Barrier Schottky (JBS) Diode","authors":"","doi":"10.1142/9789813237834_0008","DOIUrl":"https://doi.org/10.1142/9789813237834_0008","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133459917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_0005
{"title":"Simulation and Key Factors","authors":"","doi":"10.1142/9789813237834_0005","DOIUrl":"https://doi.org/10.1142/9789813237834_0005","url":null,"abstract":"","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128395393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-31DOI: 10.1142/9789813237834_0007
Akhil Punia, Ravi Sharma, Pulkit Pahwa
- The Schottky diode also known as hot carrier diode is a Semiconductor diode with a low forward voltage drop and a very fast switching action. The cat’s-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.When current flows through a diode thereis a small voltage drop across the diode terminals.A normal silicon diode has a voltage dropsilicon diode has a voltage drop is betweenapproximately 0.15–0.45 volts. This lowervoltage drop can provide higher switchingspeed and better system efficiency
{"title":"Schottky Diode","authors":"Akhil Punia, Ravi Sharma, Pulkit Pahwa","doi":"10.1142/9789813237834_0007","DOIUrl":"https://doi.org/10.1142/9789813237834_0007","url":null,"abstract":"- The Schottky diode also known as hot carrier diode is a Semiconductor diode with a low forward voltage drop and a very fast switching action. The cat’s-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.When current flows through a diode thereis a small voltage drop across the diode terminals.A normal silicon diode has a voltage dropsilicon diode has a voltage drop is betweenapproximately 0.15–0.45 volts. This lowervoltage drop can provide higher switchingspeed and better system efficiency","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-03-02DOI: 10.1142/9789813237834_0006
Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール
PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.
{"title":"P-i-N Diode","authors":"Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール","doi":"10.1142/9789813237834_0006","DOIUrl":"https://doi.org/10.1142/9789813237834_0006","url":null,"abstract":"PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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