Chien-Fu Huang, Yi-Feng Chang, Shui-Ming Cheng, Ming-Hsiang Song
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引用次数: 2
Abstract
A leakage issue induced by Bias Temperature Stress (BTS) is found in a NPN-based ESD clamp. BTS (1.1*Vdd, 125C, 8hrs) can cause an accumulation of drifted ions at an/the STI interface which leads to increased leakage and eventual device failure. TCAD simulation and activation energy extraction model are used to explain the mechanism and two solutions are proposed.
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