78 nW ultra-low-power 17 kS/s two-step-successive approximation register analogue-to-digital converter for RFID and sensing applications

I. Kianpour, M. Nejad, Lirong Zheng
{"title":"78 nW ultra-low-power 17 kS/s two-step-successive approximation register analogue-to-digital converter for RFID and sensing applications","authors":"I. Kianpour, M. Nejad, Lirong Zheng","doi":"10.1049/iet-cds.2011.0238","DOIUrl":null,"url":null,"abstract":"In this study an ultra-low-power successive approximation register (SAR) analogue-to-digital converter (ADC) for radio frequency identification (RFID) applications is presented. Several techniques ...","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2011.0238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

In this study an ultra-low-power successive approximation register (SAR) analogue-to-digital converter (ADC) for radio frequency identification (RFID) applications is presented. Several techniques ...
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78nw超低功耗17ks /s两步连续逼近寄存器模数转换器,用于RFID和传感应用
在这项研究中,提出了一种用于射频识别(RFID)应用的超低功耗连续逼近寄存器(SAR)模数转换器(ADC)。几个技巧……
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