{"title":"Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs","authors":"Jun-Mo Park, Jong-Ho Lee","doi":"10.1109/ELINFOCOM.2014.6914429","DOIUrl":null,"url":null,"abstract":"We investigated drain current-gate voltage (I<sub>D</sub>-V<sub>G</sub>) and I<sub>D</sub>-time (t) characteristics in electrolyte-gated graphene field effect transistors (GFETs). The counterclockwise hysteresis appearing in I<sub>D</sub>-V<sub>G</sub> curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs. By analyzing the I<sub>D</sub>-t characteristics of electrolyte-gated GFETs having different areas of the overlap between the gate and the source/drain electrodes, the effect of the parasitic capacitance (C<sub>para</sub>) on the displacement current is demonstrated. The characteristics of GFETs with metal gate are also reported to verify the effect of the C<sub>para</sub>.","PeriodicalId":360207,"journal":{"name":"2014 International Conference on Electronics, Information and Communications (ICEIC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Electronics, Information and Communications (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELINFOCOM.2014.6914429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We investigated drain current-gate voltage (ID-VG) and ID-time (t) characteristics in electrolyte-gated graphene field effect transistors (GFETs). The counterclockwise hysteresis appearing in ID-VG curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs. By analyzing the ID-t characteristics of electrolyte-gated GFETs having different areas of the overlap between the gate and the source/drain electrodes, the effect of the parasitic capacitance (Cpara) on the displacement current is demonstrated. The characteristics of GFETs with metal gate are also reported to verify the effect of the Cpara.
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