Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications

V. Aparin, E. Zeisel, P. Gazzerro
{"title":"Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications","authors":"V. Aparin, E. Zeisel, P. Gazzerro","doi":"10.1109/RFIC.2002.1011939","DOIUrl":null,"url":null,"abstract":"BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2002.1011939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

Abstract

BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于蜂窝CDMA/AMPS应用的高线性SiGe BiCMOS LNA和混频器
描述了用于蜂窝CDMA/AMPS应用的BiCMOS LNA和混频器。由于采用了低阻抗低频输入终端,该电路具有非常高的线性度。该LNA在高增益高线性模式下实现+12.2 dBm IIP3, 16.3 dB增益和1.5 dB NF,电流为7.7 mA。该混频器在CDMA模式下实现+14.7 dBm IIP3, 10.9 dB转换功率增益和6.7 dB SSB NF,电流为8.4 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A highly integrated 0.25 /spl mu/m BiCMOS chipset for 3G UMTS/WCDMA handset RF sub-system Modeling of passive elements with ASITIC A 2V, 2.3/4.6 GHz dual-band CMOS frequency synthesizer A 3-33 GHz PHEMT MMIC distributed drain mixer A 37/spl sim/50 GHz InP HBT VCO IC for OC-768 fiber optic communication applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1