{"title":"Hysteresis tunable FGMOS comparator","authors":"K. Nandhasri, J. Ngarmnil","doi":"10.1109/SMELEC.2000.932458","DOIUrl":null,"url":null,"abstract":"A novel hysteresis tunable voltage comparator is presented. The circuit is basically a simple voltage comparator embedded with a positive feedback scheme to create the hysteresis. In this work, two floating-gate MOSFETs (FGMOS), are employed to perform the feedback where one of the control gate voltages is used to tune an amount of the feedback current for the input devices. As a result, V/sub TRP+/ and V/sub TRP-/ of the comparator can be tuned electronically. The proposed idea is implementable on standard double-poly CMOS processes. Since the design is normally incorporated with the FGMOS layout in order to get the value of the gate capacitances effectively, Magic Program is used to create the layouts on the AMI 1.2 /spl mu/m CMOS process available through MOSIS. Simulation results from HSPICE are given to demonstrate the functionality.","PeriodicalId":359114,"journal":{"name":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2000.932458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

A novel hysteresis tunable voltage comparator is presented. The circuit is basically a simple voltage comparator embedded with a positive feedback scheme to create the hysteresis. In this work, two floating-gate MOSFETs (FGMOS), are employed to perform the feedback where one of the control gate voltages is used to tune an amount of the feedback current for the input devices. As a result, V/sub TRP+/ and V/sub TRP-/ of the comparator can be tuned electronically. The proposed idea is implementable on standard double-poly CMOS processes. Since the design is normally incorporated with the FGMOS layout in order to get the value of the gate capacitances effectively, Magic Program is used to create the layouts on the AMI 1.2 /spl mu/m CMOS process available through MOSIS. Simulation results from HSPICE are given to demonstrate the functionality.
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滞后可调FGMOS比较器
提出了一种新型的迟滞可调电压比较器。电路基本上是一个简单的电压比较器嵌入一个正反馈方案,以创建滞后。在这项工作中,使用两个浮栅mosfet (FGMOS)来执行反馈,其中一个控制栅极电压用于调整输入器件的反馈电流量。因此,比较器的V/sub TRP+/和V/sub TRP-/可以通过电子方式调谐。该方法可在标准双聚CMOS工艺上实现。由于设计通常与FGMOS布局相结合,以便有效地获得栅极电容的值,因此使用Magic程序在通过MOSIS可用的AMI 1.2 /spl mu/m CMOS工艺上创建布局。最后给出了HSPICE软件的仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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