A 3-D stacked wire bondless silicon carbide power module

Abstract

A 3-D stacked wire bondless silicon carbide (SiC) power module is proposed to achieve high voltage and current specification. The proposed 3-D stack consists of stand-alone wire bondless power modules stacked on top of each other with a novel interconnection scheme. Each stand-alone wire bondless power module has two SiC power devices connected in parallel to increase its current handling capability. The stand-alone wire bondless power modules are stacked with help of an interposer consisting of an array of low profile spring loaded pins embedded into a low temperature co-fired ceramic (LTCC) along with clamped interconnections to achieve the series connection between the power modules to increase its voltage handling capability. The proposed 3-D stack exhibits lower parasitic inductance compared to traditional wire bonded power modules. In this paper, a comparative investigation between the switching characteristic of the proposed 3-D stacked module to a conventional wire bonded module is performed.