Kuan-Ti Wang, T. Chao, Woei-Cherng Wu, Chao‐Sung Lai
{"title":"The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory","authors":"Kuan-Ti Wang, T. Chao, Woei-Cherng Wu, Chao‐Sung Lai","doi":"10.1109/MTDT.2007.4547617","DOIUrl":null,"url":null,"abstract":"2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.","PeriodicalId":422226,"journal":{"name":"2007 IEEE International Workshop on Memory Technology, Design and Testing","volume":"201 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2007.4547617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
